Solid-state Electronics

杂志介绍

Solid-state Electronics杂志介绍

《Solid-state Electronics》是一本以English为主的未开放获取国际优秀期刊，中文名称固态电子，本刊主要出版、报道物理与天体物理-ENGINEERING, ELECTRICAL & ELECTRONIC领域的研究动态以及在该领域取得的各方面的经验和科研成果，介绍该领域有关本专业的最新进展，探讨行业发展的思路和方法，以促进学术信息交流，提高行业发展。该刊已被国际权威数据库SCIE收录，为该领域相关学科的发展起到了良好的推动作用，也得到了本专业人员的广泛认可。该刊最新影响因子为1.4，最新CiteScore 指数为3。

本刊近期中国学者发表的论文主要有：

• Monolithic TCAD simulation of phase-change memory (PCM/PRAM) plus Ovonic Threshold Switch (OTS) selector device

  Author: Thesberg, M.; Stanojevic, Z.; Baumgartner, O.; Kernstock, C.; Leonelli, D.; Barci, M.; Wang, X.; Zhou, X.; Jiao, H.; Donadio, G. L.; Garbin, D.; Witters, T.; Kundu, S.; Hody, H.; Delhougne, R.; Kar, G.; Karner, M.

• New insights into the effect of spatially distributed polarization in ferroelectric FET on content addressable memory operation for machine learning applications

  Author: Su, Chang; Xu, Weikai; Zhang, Lining; Huang, Ru; Huang, Qianqian

• Analysis of uniaxial stress impact on drift velocity of 4H-SiC by full-band Monte Carlo simulation

  Author: Nishimura, T.; Eikyu, K.; Sonoda, K.; Ogata, T.

• Investigation on holding voltage of asymmetric DDSCR with floating heavy doping in 0.18?m CMOS process

  Author: Guan, Wenjie; Wang, Yang; Deng, Zhiqin; Yu, Bo; Chen, Xijun; Jin, Xiangliang; Yang, Hongjiao

英文介绍

Solid-state Electronics杂志英文介绍

It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.