Semiconductor Science And Technology

杂志介绍

Semiconductor Science And Technology杂志介绍

《Semiconductor Science And Technology》是一本以English为主的未开放获取国际优秀期刊，中文名称半导体科技，本刊主要出版、报道工程技术-ENGINEERING, ELECTRICAL & ELECTRONIC领域的研究动态以及在该领域取得的各方面的经验和科研成果，介绍该领域有关本专业的最新进展，探讨行业发展的思路和方法，以促进学术信息交流，提高行业发展。该刊已被国际权威数据库SCIE收录，为该领域相关学科的发展起到了良好的推动作用，也得到了本专业人员的广泛认可。该刊最新影响因子为1.9，最新CiteScore 指数为4.3。

本刊近期中国学者发表的论文主要有：

• Sub-band gap infrared absorption in Si implanted with Mg

  Author: Wang, Mao; Shaikh, M. S.; Kentsch, U.; Heller, R.; Zhou, Shengqiang

• Emission and capture characteristics of electron trap (E-emi=0.8 eV) in Si-doped beta-Ga2O3 epilayer

  Author: Qu, Haolan; Chen, Jiaxiang; Zhang, Yu; Sui, Jin; Gu, Yitian; Deng, Yuxin; Su, Danni; Zhang, Ruohan; Lu, Xing; Zou, Xinbo

• Straightforward synthesis and mechanism insight of TiO2/a'-AgVO3 heterostructure with enhanced photocatalytic activity

  Author: Liu, Yangbin; Liu, Nian; Lin, Minghua; Zhou, Yun; Ouyang, Xiaoping

• The interplay of process parameters and influence on the AlN films on sapphire fabricated by DC magnetron sputtering and annealing

  Author: Liu, Huan; Guo, Wei

英文介绍

Semiconductor Science And Technology杂志英文介绍

Devoted to semiconductor research, Semiconductor Science and Technology's multidisciplinary approach reflects the far-reaching nature of this topic.

The scope of the journal covers fundamental and applied experimental and theoretical studies of the properties of non-organic, organic and oxide semiconductors, their interfaces and devices, including:

fundamental properties

materials and nanostructures

devices and applications

fabrication and processing

new analytical techniques

simulation

emerging fields:

materials and devices for quantum technologies

hybrid structures and devices

2D and topological materials

metamaterials

semiconductors for energy

flexible electronics.