Ieee Transactions On Device And Materials Reliability
  • 数据库收录SCIE
  • 创刊年份2001年
  • 年发文量72
  • H-index63

Ieee Transactions On Device And Materials Reliability

期刊中文名:IEEE Transactions on Device and Materials ReliabilityISSN:1530-4388E-ISSN:1558-2574

该杂志国际简称:IEEE T DEVICE MAT RE,是由出版商Institute of Electrical and Electronics Engineers Inc.出版的一本致力于发布工程技术研究新成果的的专业学术期刊。该杂志以ENGINEERING, ELECTRICAL & ELECTRONIC研究为重点,主要发表刊登有创见的学术论文文章、行业最新科研成果,扼要报道阶段性研究成果和重要研究工作的最新进展,选载对学科发展起指导作用的综述与专论,促进学术发展,为广大读者服务。该刊是一本国际优秀杂志,在国际上有很高的学术影响力。

基本信息:
期刊简称:IEEE T DEVICE MAT RE
是否OA:未开放
是否预警:
Gold OA文章占比:24.52%
出版信息:
出版地区:UNITED STATES
出版周期:Quarterly
出版语言:English
出版商:Institute of Electrical and Electronics Engineers Inc.
评价信息:
中科院分区:3区
JCR分区:Q2
影响因子:2.5
CiteScore:4.8
杂志介绍 中科院JCR分区 JCR分区 CiteScore 投稿经验

杂志介绍

Ieee Transactions On Device And Materials Reliability杂志介绍

《Ieee Transactions On Device And Materials Reliability》是一本以English为主的未开放获取国际优秀期刊,中文名称IEEE Transactions on Device and Materials Reliability,本刊主要出版、报道工程技术-ENGINEERING, ELECTRICAL & ELECTRONIC领域的研究动态以及在该领域取得的各方面的经验和科研成果,介绍该领域有关本专业的最新进展,探讨行业发展的思路和方法,以促进学术信息交流,提高行业发展。该刊已被国际权威数据库SCIE收录,为该领域相关学科的发展起到了良好的推动作用,也得到了本专业人员的广泛认可。该刊最新影响因子为2.5,最新CiteScore 指数为4.8。

本刊近期中国学者发表的论文主要有:

  • Improved Charge-Trapping Characteristics of ZrO 2 by Al Doping for Nonvolatile Memory Applications

    Author: eexdhuang

  • Prediction of NBTI Degradation in Dynamic Voltage Frequency Scaling Operations

    Author: xjli

英文介绍

Ieee Transactions On Device And Materials Reliability杂志英文介绍

The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.

中科院SCI分区

Ieee Transactions On Device And Materials Reliability杂志中科院分区信息

2023年12月升级版
综述:
TOP期刊:
大类:工程技术 3区
小类:

ENGINEERING, ELECTRICAL & ELECTRONIC
工程:电子与电气 3区

PHYSICS, APPLIED
物理:应用 3区

2022年12月升级版
综述:
TOP期刊:
大类:工程技术 3区
小类:

ENGINEERING, ELECTRICAL & ELECTRONIC
工程:电子与电气 3区

PHYSICS, APPLIED
物理:应用 3区

2021年12月旧的升级版
综述:
TOP期刊:
大类:工程技术 3区
小类:

ENGINEERING, ELECTRICAL & ELECTRONIC
工程:电子与电气 3区

PHYSICS, APPLIED
物理:应用 3区

2021年12月基础版
综述:
TOP期刊:
大类:工程技术 4区
小类:

ENGINEERING, ELECTRICAL & ELECTRONIC
工程:电子与电气 4区

PHYSICS, APPLIED
物理:应用 4区

2021年12月升级版
综述:
TOP期刊:
大类:工程技术 3区
小类:

ENGINEERING, ELECTRICAL & ELECTRONIC
工程:电子与电气 3区

PHYSICS, APPLIED
物理:应用 3区

2020年12月旧的升级版
综述:
TOP期刊:
大类:工程技术 3区
小类:

PHYSICS, APPLIED
物理:应用 3区

ENGINEERING, ELECTRICAL & ELECTRONIC
工程:电子与电气 4区

中科院SCI分区:是中国科学院文献情报中心科学计量中心的科学研究成果。期刊分区表自2004年开始发布,延续至今;2019年推出升级版,实现基础版、升级版并存过渡,2022年只发布升级版,期刊分区表数据每年底发布。 中科院分区为4个区。中科院分区采用刊物前3年影响因子平均值进行分区,即前5%为该类1区,6%~20%为2区、21%~50%为3区,其余的为4区。1区和2区杂志很少,杂志质量相对也高,基本都是本领域的顶级期刊。

JCR分区(2023-2024年最新版)

Ieee Transactions On Device And Materials Reliability杂志 JCR分区信息

按JIF指标学科分区
学科:ENGINEERING, ELECTRICAL & ELECTRONIC
收录子集:SCIE
分区:Q2
排名:165 / 352
百分位:

53.3%

学科:PHYSICS, APPLIED
收录子集:SCIE
分区:Q2
排名:87 / 179
百分位:

51.7%

按JCI指标学科分区
学科:ENGINEERING, ELECTRICAL & ELECTRONIC
收录子集:SCIE
分区:Q3
排名:186 / 354
百分位:

47.6%

学科:PHYSICS, APPLIED
收录子集:SCIE
分区:Q3
排名:99 / 179
百分位:

44.97%

JCR分区:JCR分区来自科睿唯安公司,JCR是一个独特的多学科期刊评价工具,为唯一提供基于引文数据的统计信息的期刊评价资源。每年发布的JCR分区,设置了254个具体学科。JCR分区根据每个学科分类按照期刊当年的影响因子高低将期刊平均分为4个区,分别为Q1、Q2、Q3和Q4,各占25%。JCR分区中期刊的数量是均匀分为四个部分的。

CiteScore 评价数据(2024年最新版)

Ieee Transactions On Device And Materials Reliability杂志CiteScore 评价数据

  • CiteScore 值:4.8
  • SJR:0.436
  • SNIP:1.148
学科类别 分区 排名 百分位
大类:Engineering 小类:Safety, Risk, Reliability and Quality Q2 65 / 207

68%

大类:Engineering 小类:Electrical and Electronic Engineering Q2 274 / 797

65%

大类:Engineering 小类:Electronic, Optical and Magnetic Materials Q2 103 / 284

63%

历年影响因子和期刊自引率

投稿经验

Ieee Transactions On Device And Materials Reliability杂志投稿经验

该杂志是一本国际优秀杂志,在国际上有较高的学术影响力,行业关注度很高,已被国际权威数据库SCIE收录,该杂志在ENGINEERING, ELECTRICAL & ELECTRONIC综合专业领域专业度认可很高,对稿件内容的创新性和学术性要求很高,作为一本国际优秀杂志,一般投稿过审时间都较长,投稿过审时间平均 较慢,6-12周 ,如果想投稿该刊要做好时间安排。版面费不祥。该杂志近两年未被列入预警名单,建议您投稿。如您想了解更多投稿政策及投稿方案,请咨询客服。

免责声明

若用户需要出版服务,请联系出版商:IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 445 HOES LANE, PISCATAWAY, USA, NJ, 08855-4141。